A Galvanic Isolated Amplifier Based on CMOS Integrated Hall-Effect Sensors

نویسندگان

چکیده

A novel galvanic isolated amplifier based on CMOS integrated Hall sensors is presented in this paper. Two serially connected Hall-effect are along with their instrumentation amplifiers using the TSMC 65nm process. printed-circuit board employed to validate proposed isolation by assembling chip chopper modulator, coil driver, miniature coil, variable gain amplifier, and anti-aliasing filter. Because of miniaturized size components, approach can be packaged for industrial applications. This solution replaces need bulky/frequency dependent current transformers, complex embedded analog digital converters, allows used voltage sensing The introduced prototype achieves an input referred offset 1 mV, 50 dB full-scale signal-to-noise ratio a 10 kHz bandwidth, spurious-free dynamic range 53 dB, while satisfying continuous working 550 V.

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ژورنال

عنوان ژورنال: IEEE Transactions on Circuits and Systems I-regular Papers

سال: 2021

ISSN: ['1549-8328', '1558-0806']

DOI: https://doi.org/10.1109/tcsi.2021.3052476